Interface Structure and Adhesion of Ti Films on Si Substrates.

Multifunctional nanostructured Ti-Si-C thin films

In this Thesis, I have investigated multifunctional nanostructured Ti-Si-C thin films synthesized by magnetron sputtering in the substrate-temperature range from room temperature to 900 °C. The studies cover high-temperature growth of Ti3SiC2 and Ti4SiC3, low-temperature growth of Ti-Si-C nanocomposites, and Ti-Si-C-based multilayers, as well as their electrical, mechanical, and thermal-stabili...

Realization of hexagonal barium ferrite thick films on Si substrates

Hexagonal barium ferrite thick films (50–200μm) have been deposited on Si and Al2O3/Si substrates using a screen printing technique. X-ray diffractometry, scanning electron microscopy and magnetometry were used to characterize and correlate the ferrite films’ microstructure and magnetic properties. The experiments indicated that an Al2O3 underlayer was effective in preventing silicon diffusion ...

Investigation of the structure of 2H-AlN films on Si(001) substrates

By conventional transmission electron microscopy (CTEM) investigations on 2H-AlN films grown by plasma-assisted molecular beam epitaxy (MBE) on Si(001) the influence of the offaxis angle of the substrate surface on the film structure was studied. Three types of Si(001) substrates were used: on-axis, ~1°, and ~5° off-axis Si(001) substrates. The AlN layer on an exact oriented Si(001) substrates ...

Growth and Characterization of Ti-Si-N Thin Films

Kinetics of silicide formation by thin films of V on Si and Si 0 2 substrates *

The reaction rate of vacuum-evaporated films of V of the order of I 000 A thick is investigated by MeV He backscattering spectrometry. On substrates of single-crystal Si and for anneal times up to several hours in the temperature range 570--650 ·c, VSi 2 is formed at a linear rate in time. The activation energy of the process is 1.7±0.2 eV. The presence of oxygen in amounts of 10% can significa...